Raman studies of the growth mechanism of ZnSe/GaAs(001) heterostructures

Publisher Website
Google Scholar
Abstract
Monocrystalline ZnSe/GaAs(001) heterostructures have been grown by atomic layer epitaxy with typical thicknesses up to 200 nm. The 1LO Raman spectrum of ZnSe and GaAs, respectively, was recorded in situ during growth interruptions. The spectra were analyzed with respect to Raman intensity, phonon frequency, and bandwidth. Two different growth modes are distinguishable: (i) The biaxial compressive strain in the epilayers is increased in the thickness range up to 40 nm due to lattice mismatch of the heterosystem. This can be interpreted as a transition from an initial 3D island to the 2D layer by layer growth. (ii) When larger thicknesses (40–170 nm) are reached the strain is constant and the 1LO Raman intensity from the epilayer and from the substrate oscillates significantly with thickness. These periodic oscillations are quantitatively described in the framework of interference-enhanced Raman scattering and verify the 2D growth mode in this thickness range. The crystalline quality and the final thickness of the samples were determined by transmission electron microscopy.