Radiation damaged silicon as a semi-insulating relaxation semiconductor: static electrical properties
- 1 January 1999
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 14 (8) , 667-678
- https://doi.org/10.1088/0268-1242/14/8/301
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectorsIEEE Transactions on Nuclear Science, 1998
- Semi-insulating GaAs as a relaxation semiconductorJournal of Applied Physics, 1998
- Negative capacitance effects in semiconductor diodesSolid State Communications, 1998
- Ohmic I–V characteristics in semi-insulating semiconductor diodesSolid State Communications, 1998
- Suppression of irradiation effects in gold-doped silicon detectorsJournal of Physics D: Applied Physics, 1997
- Semiconductor detectors for use in high radiation damage environments — Semi-insulating GaAs or silicon?Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997
- Experimental study of transport in a trap-dominated relaxation semiconductorPhysical Review B, 1991
- Relaxation semiconductors: In theory and in practiceApplied Physics A, 1991
- Experimental evidence for relaxation phenomena in high-purity siliconPhysical Review Letters, 1989
- Transport in Relaxation SemiconductorsPhysical Review B, 1972