Negative capacitance effects in semiconductor diodes
- 1 May 1998
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 107 (2) , 47-50
- https://doi.org/10.1016/s0038-1098(98)00162-8
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Ohmic I–V characteristics in semi-insulating semiconductor diodesSolid State Communications, 1998
- Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperaturesSolid-State Electronics, 1997
- New technique for the determination of series resistance of Schottky barrier diodesSolid-State Electronics, 1992
- Reply to ‘‘Comment on ‘Negative capacitance at metal-semiconductor interfaces’ ’’ [J. Appl. Phys. 70, 1090 (1991)]Journal of Applied Physics, 1991
- Anomalous inductive effect in Schottky junctionsCanadian Journal of Physics, 1991
- Inductive reactances and excess capacitances at WNx/n-GaAs Schottky gate contactsJournal of Vacuum Science & Technology B, 1990
- Origin of the Excess Capacitance at Intimate Schottky ContactsPhysical Review Letters, 1988
- Spectroscopy of delayed electronic transitions in GaAs Schottky diodesSemiconductor Science and Technology, 1987
- Electronic Basis of Switching in Amorphous Semiconductor AlloysPhysical Review Letters, 1972
- Transport in Relaxation SemiconductorsPhysical Review B, 1972