Reply to ‘‘Comment on ‘Negative capacitance at metal-semiconductor interfaces’ ’’ [J. Appl. Phys. 70, 1090 (1991)]
Open Access
- 15 July 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (2) , 1089
- https://doi.org/10.1063/1.349678
Abstract
The origin of the excess admittance at a forward‐biased Schottky diode invokes a controversy among research workers. Werner commented on our papers [J. Appl. Phys. 70, 1090 (1991)], in which he believes that the excess admittance is caused by minority‐carrier extraction at defective back contacts rather than charge capture and emission at interface states. This reply answers the questions raised by Werner et al. [Phys. Rev. Lett. 60, 53 (1988)] and points out that the minority‐carrier effect cannot account for the experimental observations.This publication has 6 references indexed in Scilit:
- Admittance of Al/GaAs Schottky contacts under forward bias as a function of interface preparation conditionsApplied Physics Letters, 1991
- Negative capacitance at metal-semiconductor interfacesJournal of Applied Physics, 1990
- Interface capacitance in metal-semiconductor junctionsJournal of Applied Physics, 1989
- Origin of the Excess Capacitance at Intimate Schottky ContactsPhysical Review Letters, 1988
- Admittance Measurements at Epitaxial and Nonepitaxial Silicide Schottky ContactsMRS Proceedings, 1987
- Minority carrier effects upon the small signal and steady-state properties of Schottky diodesSolid-State Electronics, 1973