Negative capacitance at metal-semiconductor interfaces
- 15 September 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (6) , 2845-2848
- https://doi.org/10.1063/1.346442
Abstract
A negative capacitance effect has been observed in metal-semiconductor contacts. This phenomenon is explained by considering the loss of interface charge at occupied states below Fermi level due to impact ionization. A modified Shockley–Read treatment is proposed to interpret the experimental observations. In particular, a two-energy-level simplified model is presented to simulate the capacitance spectrum. The results are in good agreement with the experimental data.This publication has 14 references indexed in Scilit:
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