Interface-State Measurements at Schottky Contacts: A New Admittance Technique
- 25 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (8) , 1080-1083
- https://doi.org/10.1103/physrevlett.57.1080
Abstract
We present a new characterization method for traps at the interfacial layer of Schottky contacts. This method is based on ac-admittance measurements and a new trap transistor model which quantitatively explains the measured ac behavior as well as the dc characteristics. In particular we propose the ac current across the interface to consist of capacitive as well as of conductive parts. We apply the analysis to Au/GaAs Schottky contacts and find a weak energy dependence for the density of interface states in the band gap of GaAs.Keywords
This publication has 10 references indexed in Scilit:
- Electronic states at silicide-silicon interfacesPhysical Review Letters, 1986
- Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)Physical Review Letters, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Fermi-Level Pinning by Misfit Dislocations at GaAs InterfacesPhysical Review Letters, 1983
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Are interface states consistent with Schottky barrier measurements?Applied Physics Letters, 1982
- Interface states in a cleaved metal-silicon junctionJournal of Applied Physics, 1979
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942