Are interface states consistent with Schottky barrier measurements?
- 1 August 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (3) , 285-287
- https://doi.org/10.1063/1.93466
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Interface states in a cleaved metal-silicon junctionJournal of Applied Physics, 1979
- Comments on the conduction mechanism in Schottky diodesJournal of Physics D: Applied Physics, 1972
- Direct Photoelectric Measurement of the Interface-State Density at a Pt-Si InterfacePhysical Review Letters, 1972
- Recombination velocity effects on current diffusion and imref in schottky barriersSolid-State Electronics, 1971
- Surface-State and Interface Effects in Schottky Barriers at n-Type Silicon SurfacesJournal of Applied Physics, 1965
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Theory of Surface StatesPhysical Review B, 1965
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942