An improved differential voltage technique for capacitance measurement
- 29 February 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (2) , 167-170
- https://doi.org/10.1016/0038-1101(88)90125-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electronic states at silicide-silicon interfacesPhysical Review Letters, 1986
- Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)Physical Review Letters, 1985
- Accurate phase capacitance spectroscopy of transition metal silicon diodesApplied Physics Letters, 1985
- Method for extending the range of low-frequency admittance measurementsReview of Scientific Instruments, 1976
- Determination of the density and the relaxation time of silicon-metal interfacial statesSolid-State Electronics, 1975