Admittance Measurements at Epitaxial and Nonepitaxial Silicide Schottky Contacts
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We report results of an extensive study examining the usefulness of low frequency capacitance measurements for the characterization of interface states at intimate Schottky contacts. Our measurements on epitaxial as well as on nonepitaxial silicides reveal that the imaginary component of the low frequency ac-admittance is usually inductive. This inductance is caused by minority carriers that are injected by the Schottky contact and modulate the conductivity of the series resistance of the bulk silicon. The frequently reported excess capacitances (instead of inductances) that were ascribed to interface states are only reproducible when we use imperfect back-contacts to the bulk Si that add a contact resistance to the equivalent dc-circuit of the Schottky diode. Excess low frequency capacitances at intimate Schottky contacts are therefore not related to interface states but rather to the contact resistance of the back-contact.Keywords
This publication has 13 references indexed in Scilit:
- Measurement of interface states in palladium silicon diodesJournal of Applied Physics, 1986
- Interface-State Measurements at Schottky Contacts: A New Admittance TechniquePhysical Review Letters, 1986
- Electronic states at silicide-silicon interfacesPhysical Review Letters, 1986
- Correlation of Schottky-Barrier Height and Microstructure in the Epitaxial Ni Silicide on Si(111)Physical Review Letters, 1985
- Single crystal silicide silicon interfaces: Structures and barrier heightsJournal of Vacuum Science & Technology A, 1985
- Accurate phase capacitance spectroscopy of transition metal silicon diodesApplied Physics Letters, 1985
- Interface States at Au/Gaas Schottky ContactsMRS Proceedings, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- Corrélations entre méthode de préparation, hauteur de barrière et états d'interface dans les contacts métal-GaAsRevue de Physique Appliquée, 1983
- Minority carrier effects upon the small signal and steady-state properties of Schottky diodesSolid-State Electronics, 1973