Measurement of interface states in palladium silicon diodes
- 15 November 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (10) , 3611-3615
- https://doi.org/10.1063/1.337567
Abstract
In this paper we present the results of a forward-biased capacitance measurement on palladium silicon Schottky diodes. The data are interpreted in terms of the interface state density by taking into account the effect of series resistance and using Shockley–Read–Hall statistics. Exchange of charge between the metal and the interface states is included in the model. For the as-deposited sample, an effective state is postulated to lie opposite the metal Fermi level with a concentration of 1×1012/cm2. Upon annealing and formation of palladium silicide, the density of states decreases by a factor of 2 and changes occur in the capture and emission time constants.This publication has 10 references indexed in Scilit:
- Accurate phase capacitance spectroscopy of transition metal silicon diodesApplied Physics Letters, 1985
- Study of metal-semiconductor interface states using Schottky capacitance spectroscopyJournal of Physics C: Solid State Physics, 1983
- A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodesJournal of Applied Physics, 1983
- Interface states at the Pt silicide—Si interfacePhysical Review B, 1982
- Electronic states and atomic structure at the Pd2Si–Si interfaceJournal of Vacuum Science and Technology, 1981
- Stoichiometric and Structural Origin of Electronic States at theSi-Si InterfacePhysical Review Letters, 1981
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947