Depth profiling of D implanted into Ti at different temperatures
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 48 (1-4) , 231-236
- https://doi.org/10.1080/00337578008209259
Abstract
Depth proliles of 6.6 keV D+ implanted into titanium in the temperature range between 140 K and 500 K have been studied using the D(3He, α) H nuclear reaction. At 140 K the trapped amount is close to 100% at low doses and reaches saturation at about 2 × 1018D/cm2, whereas at room temperature no saturation could be reached up to 2 × 1019 D/cm2. At higher temperatures the amount decreases until no deuterium could be detected in the surface layer above 500 K. The depth profiles are strongly dependent on temperature. At 140 K the deuterium is found in a surface layer of about 2000 Å with a maximum ratio of deuterium to metal atoms of 2.5. At room temperature a hydride layer of TiD1.8, forms. The thickness of the hydride layer depends on deuterium dose and extends to 1.5 μm at 2 × 1019 D/cm2. At higher temperatures the atom concentrations are lower and the deuterium seems to diffuse deeply into the bulk. These results are discussed in terms of diffusion of deuterium i n Ti and titanium hydride.Keywords
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