Effect of conduction-band nonparabolicity on quantized energy levels of a quantum well
- 25 August 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (8) , 456-457
- https://doi.org/10.1063/1.97114
Abstract
The effects of conduction‐band nonparabolicity on quantized energy levels of an In0.5Ga0.5As /In0.5Al0.5As quantum well have been analyzed using the original Luttinger–Kohn ‘‘effective mass’’ equation, which is, in principle, valid as long as the perturbation to the periodic lattice potential can be regarded as slowly varying. The results differ substantially from those previously reported which employed the energy‐dependent effective mass approach.Keywords
This publication has 6 references indexed in Scilit:
- Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunctionJournal of Applied Physics, 1984
- Ballistic transport in GaAsIEEE Electron Device Letters, 1983
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Current Transport in Al/InAlAs/InGaAs HeterostructuresPhysica Status Solidi (a), 1982
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955