Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
- 15 April 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8) , 3176-3179
- https://doi.org/10.1063/1.333348
Abstract
Photoluminescence studies at 4 K on Ga0.47In0.53As/ Al0.48In0.52As single quantum wells exhibit emission ranging from 1.318 eV for a 15‐Å well to 0.82 eV for thick wells. The emission energy of each single quantum well is compared to theoretical curves which are generated from a finite potential square well model. The closest agreement between the experimental curves and the theoretical curves occurs when the conduction band discontinuity is taken to be 70% of the band‐gap discontinuity or 0.52 eV.This publication has 8 references indexed in Scilit:
- Optical properties of GaInAs/AlInAs single quantum wellsApplied Physics Letters, 1983
- Ballistic transport in GaAsIEEE Electron Device Letters, 1983
- GaInAs–AlInAs heterostructures for optical devices grown by MBEJournal of Vacuum Science & Technology B, 1983
- Ga 0.47 In 0.53 As/Al 0.48 In 0.52 As multiquantum-well LEDs emitting at 1.6 μmElectronics Letters, 1983
- Current Transport in Al/InAlAs/InGaAs HeterostructuresPhysica Status Solidi (a), 1982
- A novel technique for GaInAsP/InP buried heterostructure laser fabricationApplied Physics Letters, 1982
- Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)Electronics Letters, 1982
- Ga0.47In0.53As: A ternary semiconductor for photodetector applicationsIEEE Journal of Quantum Electronics, 1980