Ultrafast excitonic room temperature nonlinearity in neutron irradiated quantum wells
- 13 January 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (2) , 158-160
- https://doi.org/10.1063/1.118346
Abstract
Sharp room temperature exciton features and complete recovery of the excitonic absorption with 21 ps time constant are demonstrated in neutron irradiated (Ga,Al)As/GaAs multiple quantum wells. Carrier lifetime reduction is consistent with the EL2 midgap defect which is efficiently generated by fast neutrons. Influence of gamma rays accompanying neutron irradiation is discussed. Neutron irradiation provides a straightforward way to control carrier lifetime in semiconductor heterostructures with minor deterioration of their excitonic properties.Keywords
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