Confinement Subbands in an InGaAs/GaAs Non-Square Quantum Well
- 1 January 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (1A) , L7-10
- https://doi.org/10.1143/jjap.31.l7
Abstract
Calculations of the confinement subbands energy levels, interband transitions energy and related overlapping wavefunctions in a single In0.2Ga0.8As/GaAs non-square strained quantum well structure have been carried out for an error function confinement profile. The results indicate a squeezing of subband states during the latter stages of diffusion, and an enhancement of the off diagonal transitions overlapping wavefunction, during the mid stages of diffusion, which give rise to a relaxed selection rule.Keywords
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