Thermal interdiffusion in InGaAs/GaAs strained quantum wells as a function of doping density
- 31 December 1991
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 9 (1) , 39-42
- https://doi.org/10.1016/0749-6036(91)90089-a
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Disorder of an InxGa1−xAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1983