Disorder of an InxGa1−xAs-GaAs superlattice by Zn diffusion
- 1 November 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (11) , 6382-6384
- https://doi.org/10.1063/1.331914
Abstract
Data are presented showing that Zn diffusion into an InxGa1−xAs‐GaAs superlattice (240 Å/period) completely disorders the superlattice layers, resulting in InyGa1−yAs of uniform composition. X‐ray diffraction data and sputter‐Auger profiles are shown, comparing the as‐grown superlattice with a partially disordered (1 h, 615 °C Zn diffusion) and a totally disordered (1 h, 680 °C Zn diffusion) superlattice.This publication has 11 references indexed in Scilit:
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