Diffusion of zinc in gallium arsenide: A new model
- 1 July 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (7) , 4617-4619
- https://doi.org/10.1063/1.329340
Abstract
Experimental results on the diffusion of Zn in GaAs which could not be satisfactorily explained in terms of a Frank–Turnbull mechanism involving vacancies can be understood with a ’’kick‐out model’’ in which the equilibrium between interstitial and substitutional Zn is established via gallium interstitials.This publication has 9 references indexed in Scilit:
- Diffusion of gold in silicon: A new modelApplied Physics Letters, 1981
- Mechanism and kinetics of the diffusion of gold in siliconApplied Physics A, 1980
- The influence of intrisic defects on the degradation and luminescence of GaAs and other III–V compoundsApplied Physics A, 1980
- Dislocation climb model in compound semiconductors with zinc blende structureApplied Physics Letters, 1976
- Anomalous diffusion profiles of zinc in GaAsJournal of Materials Science, 1972
- Engineering Applications of Current and Potential Distributions in Disk Electrode SystemsJournal of the Electrochemical Society, 1971
- Time-Dependence of Zinc Diffusion in Gallium Arsenide under a Concentration GradientJournal of the Electrochemical Society, 1971
- Rapid zinc diffusion in gallium arsenideSolid-State Electronics, 1962
- Mechanism of Diffusion of Copper in GermaniumPhysical Review B, 1956