Diffusion of gold in silicon: A new model
- 1 February 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (3) , 157-159
- https://doi.org/10.1063/1.92285
Abstract
Experimental results from the diffusion of Au in Si, which could not be explained before, in terms of the Frank‐Turnbull mechanism involving vacancies, can be quantitatively understood with the assumption that the equilibrium between interstitial and substitutional Au is established via Si self‐interstitials. The results suggest that these defects dominate diffusion in Si.Keywords
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