Evidence for negatively charged DX-center in Si-doped AlGaAs from persistent photoconductivity measurements
- 28 February 1991
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 77 (5) , 327-330
- https://doi.org/10.1016/0038-1098(91)90743-f
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- Chadi, Chang, and Walukiewicz replyPhysical Review Letters, 1989
- Evidence against the negative-charge-state model for theDXcenter inn-type GaAsPhysical Review Letters, 1989
- Evidence for large lattice relaxation at theDXcenter in Si-dopedAsPhysical Review B, 1988
- A new model of deep donor centres in AlxGa1-xAsSemiconductor Science and Technology, 1987
- Theory of theDXcenter inAs and GaAs crystalsPhysical Review B, 1986
- A Model for DX Centers: Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor AlloysJapanese Journal of Applied Physics, 1985
- Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic PressureJapanese Journal of Applied Physics, 1985
- A Simple Calculation of the DX Center Concentration Based on an L-Donor ModelJapanese Journal of Applied Physics, 1985
- Hall-Effect Analysis of Persistent Photocurrents in-GaAs LayersPhysical Review Letters, 1979
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979