Gate layout and bonding pad structure of a RF n-MOSFET for low noise performance
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (12) , 607-609
- https://doi.org/10.1109/55.887481
Abstract
Several 0.35 μm n-MOSFETs with different gate geometry were analyzed to maximize the RF performance, after that the pads were shielded to ground to reduce the noise contribution of pads. The F min of 0.5 dB was improved by utilizing the ground-shielded pads, and the F min of 0.2 dB was improved by using the double-sided gate contact type. The n-MOSFET having the single-sided gate contact and ground-shielded pad showed the F min of 0.46 dB and 0.37 dB at 2 GHz with the drain current of 2.0 mA and 5.3 mA, respectively. Furthermore, the weak frequency dependency of the F min showed a great possibility of a low noise amplifier above 5 GHz.Keywords
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