Resonant tunneling circuit technology: has it arrived?
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 119-122
- https://doi.org/10.1109/gaas.1997.628251
Abstract
A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today's fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.Keywords
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