Room temperature negative differential conductance in three-terminal silicon surface tunneling device

Publisher Website

24 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1996.553581

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Negative differential conductance in three-terminal silicon tunneling device
Applied Physics Letters, 1996
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Japanese Journal of Applied Physics, 1994
High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
IEEE Electron Device Letters, 1991
Subband spectroscopy by surface channel tunneling
Surface Science, 1978
New Phenomenon in Narrow Germanium $p - n$ Junctions
Physical Review B, 1958