High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (6) , 306-308
- https://doi.org/10.1109/55.82069
Abstract
A GaAs layer grown by molecular beam epitaxy at 200 degrees C is used as the gate insulator for GaAs MISFETs. The gate reverse breakdown and forward turn-on voltages, are improved substantially by using the high-resistivity GaAs layer between the gate metal and the conducting channel. It is shown that a reverse bias of 42 V or forward bias of 9,3 V is needed to reach a gate current of 1 mA/mm of gate width. A MISFET having a gate of 1.5*600 mu m delivers an output power of 940 mW (1.57-W/mm power density) with 4.4-dB gain and 27.3% power added efficiency at 1.1 GHz. This is the highest power density reported for GaAs-based FETs.Keywords
This publication has 8 references indexed in Scilit:
- Sidegating reduction for GaAs integrated circuits by using a new buffer layerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBEIEEE Electron Device Letters, 1990
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- GaAs/AlGaAs heterojunction MISFET's having 1-W/mm power density at 18.5 GHzIEEE Electron Device Letters, 1986
- Microwave power GaAs MISFET's with undoped AlGaAs as an insulatorIEEE Electron Device Letters, 1984
- GaAs FETs having high output power per unit gate widthIEEE Electron Device Letters, 1981
- Control of gate—Drain avalanche in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980
- Status of the GaAs metal—oxide—semiconductor technologyIEEE Transactions on Electron Devices, 1980