Role of growth temperature in GSMBE growth of strained-layer InGaAs/GaAs quantum well lasers
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 209-212
- https://doi.org/10.1016/0022-0248(93)90606-w
Abstract
No abstract availableKeywords
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