Fracture of Directionally Solidified Multicrystalline Silicon
- 1 April 1982
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 65 (4) , c49
- https://doi.org/10.1111/j.1151-2916.1982.tb10413.x
Abstract
Fracture toughness data is given for multicrystalline silicon which has been prepared by directional solidification. Results indicated a KIC of 0.8 to 0.87 MN /m3/2, which is consistent with data for single‐crystal silicon.Keywords
This publication has 2 references indexed in Scilit:
- Effect of grain boundaries in silicon on minority-carrier diffusion length and solar-cell efficiencyApplied Physics Letters, 1978
- Controlled Surface Flaws in Hot‐Pressed Si3N4Journal of the American Ceramic Society, 1975