A piezoresistive GaAs pressure sensor with GaAs/AlGaAs membrane technology
- 1 June 1995
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 5 (2) , 139-142
- https://doi.org/10.1088/0960-1317/5/2/021
Abstract
This paper reports on the technology and performance of piezoresistive pressure sensors that utilize GaAs/AlGaAs membranes for pressure transduction into stress to induce resistance changes of p doped GaAs resistors. We have tested the sensor to differential pressure up to 8*104 Pa and in a temperature range of room temperature up to 433 K.Keywords
This publication has 3 references indexed in Scilit:
- Fabrication of microstructures for integrated sensors on GaAsJournal of Micromechanics and Microengineering, 1993
- Selective etching of GaAs and Al0.30Ga0.70As with citric acid/hydrogen peroxide solutionsJournal of Vacuum Science & Technology B, 1990
- Selective Etching Characteristics of Peroxide/Ammonium‐Hydroxide Solutions for GaAs / Al0.16Ga0.84AsJournal of the Electrochemical Society, 1982