Effect of Plasma Damage on Interface State Density Between a-Si:H and Insulating Films
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Investigation of Surface Passivation Effect of a-SiNx:H on a-Si:H by Photothermal Deflection SpectroscopyJapanese Journal of Applied Physics, 1994
- Optical absorption of high quality a-Si:H and a-SixN1−x:H in the low energy region 0.43 eV ≈1.5 eV by PDSJournal of Non-Crystalline Solids, 1993
- Interface state density of SiNX:H/c-Si MIS structureJournal of Non-Crystalline Solids, 1993
- Spectroscopic Study on N2O-Plasma Oxidation of Hydrogenated Amorphous Silicon and Behavior of NitrogenJapanese Journal of Applied Physics, 1993
- Surface effects in hydrogenated amorphous silicon studied by photothermal-deflection experimentsPhysical Review B, 1991
- Photothermal detection of surface states in amorphous silicon filmsApplied Physics A, 1990
- Photoemission spectroscopy of heterojunctions of hydrogenated amorphous silicon with silicon oxide and nitridePhysical Review B, 1989
- Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon filmsApplied Physics Letters, 1987
- Investigation of surface passivation of amorphous silicon using photothermal deflection spectroscopyApplied Physics Letters, 1987