Investigation of Surface Passivation Effect of a-SiNx:H on a-Si:H by Photothermal Deflection Spectroscopy
- 1 June 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (6B) , L873-875
- https://doi.org/10.1143/jjap.33.l873
Abstract
Optical absorption of surface- and interface-states in a-Si:H and a-SiN x :H (x=1.2 and 1.7) films was measured by photothermal deflection spectroscopy. The surface-state absorption of a-Si:H was reduced by passivation of the a-SiN1.7:H or a-SiN1.2:H layer. The surface absorptions of a-SiN1.7:H and a-SiN1.2:H are lower than that of a-Si:H. The origin of free surface absorption of a-Si:H was discussed in terms of the native oxide layer.Keywords
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