Infra-red Absorption in Gallium Phosphide-Gallium Arsenide Alloys I. Absorption in n-type Material
- 1 August 1963
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 82 (2) , 315-323
- https://doi.org/10.1088/0370-1328/82/2/318
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Fundamental Reflectivity of GaAs at Low TemperaturePhysical Review Letters, 1962
- Injection electroluminescence at p-n junctions in zinc-doped gallium phosphideJournal of Physics and Chemistry of Solids, 1962
- Band Structure of the Intermetallic Semiconductors from Pressure ExperimentsJournal of Applied Physics, 1961
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960
- Optical absorption in n-type gallium phosphideJournal of Physics and Chemistry of Solids, 1959
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- Infra-red Absorption in SemiconductorsReports on Progress in Physics, 1956