Tunnel-junction-connected distributed-feedback vertical-cavity surface-emitting laser

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Abstract
An injection distributed-feedback vertical-cavity surface-emitting laser(VCSEL) with tunnel junctions served as quasi-Ohmic intercontacts (tunnel-junction-connected distributed-feedback VCSEL) is proposed. A periodic structure of vertically stacked double-heterostructure laser diodes connected by low-resistance tunnel junctions forms a vertical distributed-feedback (DFB) laser medium. To minimize the threshold, the DFB structure is placed in a Fabry–Perot cavity designed to match gain layers with the maximums of the optical mode, and the tunnel junctions—with its minimums. The passive regions with tunnel junctions provide effective vertical injection into each active region of this multiple-active-region laser. This DFBVCSEL is expected to have an improved performance, specifically, reduced threshold current and heightened output power.