Pulsed laser annealing of zinc implanted GaAs
- 16 February 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (4) , 85-87
- https://doi.org/10.1049/el:19780058
Abstract
Samples of n type GaAs implanted with 1015Zn+/cm2 at room temperature were irradiated with a ruby laser of pulse length 0.8 ms. For samples coated with Si3N4 a laser energy of 1.5–2.5 J/cm2 produced electrical activity of 40–50% of the implanted dose. Peak hole concentrations up to about 7 × 1019 cm−3 were measured. Uncoated samples irradiated with similar laser energies were not electrically active.Keywords
This publication has 2 references indexed in Scilit:
- Implantation of Be, Cd, Mg and Zn in GaAs and GaAsl-xPxPublished by Springer Nature ,1977
- Annealing of Defects in Ion-Implanted Layers by Pulsed Laser RadiationPublished by Springer Nature ,1977