The 1.36 eV radiative transition in InP: its dependence on growth conditions in MBE and MOCVD material
- 14 August 1984
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 17 (8) , L133-L136
- https://doi.org/10.1088/0022-3727/17/8/006
Abstract
A radiative bound exciton transition at 1.36 eV has been observed in the low temperature cathodoluminescence spectrum emitted from InP grown epitaxially by both molecular beam epitaxy (MBE) and by metal-organic chemical vapour deposition (MOCVD) under certain specific growth conditions. In both growth techniques the conditions give rise to a depletion of phosphorus in the epilayers and it is suggested that the defect binding the excitons may be a complex incorporating a phosphorus vacancy.Keywords
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