Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistors
- 15 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (10) , 4236-4243
- https://doi.org/10.1063/1.339096
Abstract
Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with heavily doped GaAs layers and a p+-GaAs/n-AlGaAs heterojunction grown by molecular beam epitaxy at a low temperature of 600 °C is discussed. Each photoluminescence signal in the HBT is identified, and the relationship between performance as a transistor and photoluminescence discussed. A novel photoluminescence signal related to the p+-GaAs/n-AlGaAs heterojunction in the HBT was identified. This signal is thought to originate in the transition of the two-dimensional electrons in the notch formed at the heterojunction to the acceptor and acceptor-related defect levels.This publication has 18 references indexed in Scilit:
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