Effect of substrate temperature on molecular beam epitaxial GaAs growth using As2
- 15 October 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (8) , 2231-2235
- https://doi.org/10.1063/1.334282
Abstract
The effect of substrate temperature on Si incorporation, electron mobility, growth rate, and surface morphology in GaAs films grown by molecular beam epitaxy using a dimeric arsenic (As2) source has been investigated. As the substrate temperature was raised from 570 to 700 °C, the measured carrier concentration and electron mobility were observed to decrease while the Si and C acceptor peaks detected in low‐temperature photoluminescence measurements were seen to increase, indicating increased carrier compensation with increasing substrate temperature. The epitaxial GaAs growth rate was nearly independent of substrate temperature with the use of As2, in contrast with the observed reduction in growth rate for substrate temperatures >640 °C when the tetrameric arsenic (As4) is employed. Surface defects on films grown with As2 were found generally to increase with substrate temperature; however, at 680 °C defect densities could be reduced tenfold or more by increasing the arsenic overpressure. No such decrease was observed in films grown with As4.This publication has 17 references indexed in Scilit:
- Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxyJournal of Applied Physics, 1983
- Growth of Al 0.3 Ga 0.7 As by molecular beam epitaxy in the forbidden temperature range using As 2Electronics Letters, 1983
- Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1982
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- The effect of As/Ga flux ratio on the photoluminescent spectra from molecular beam epitaxially-grown Sn-doped AlxGa1−xAsApplied Physics Letters, 1981
- Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBEJournal of Crystal Growth, 1978
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975