Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBE
- 1 August 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 44 (1) , 75-83
- https://doi.org/10.1016/0022-0248(78)90330-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Temperature range for growth of autoepitaxial GaAs films by MBEJournal of Crystal Growth, 1978
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- Molecular Beam Epitaxy of GaP and GaAs1-xPxJapanese Journal of Applied Physics, 1976
- Kinetic studies of the growth of III–V compounds using modulated molecular beam techniquesJournal of Crystal Growth, 1975
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurementsSurface Science, 1974
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973
- Multiple Knudsen Cell Effusion. Enthalpies of Vaporization of Indium and Gallium1The Journal of Physical Chemistry, 1966