Ultraviolet photosulfidation of III-V compound semiconductors: A new approach to surface passivation
- 2 May 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (18) , 2388-2390
- https://doi.org/10.1063/1.111623
Abstract
A new passivation technique for III‐V compound semiconductors based on ultraviolet photolysis of elemental sulfur vapor has been developed. Photosulfidation produces a greater increase in the photoluminescence intensity from GaAs samples than that produced by conventional (NH4)2S dip treatments and is more photostable than the conventional wet process. X‐ray photoelectron spectroscopy of the photosulfided GaAs surfaces indicate formation of a surface sulfide rather than the disulfide characteristic of the (NH4)2S process.Keywords
This publication has 19 references indexed in Scilit:
- Dopant passivation in AlInAs and InGaP by atomic deuteriumApplied Physics Letters, 1991
- Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound SemiconductorsJapanese Journal of Applied Physics, 1991
- Bonding states of chemisorbed sulfur atoms on GaAsSurface Science, 1991
- ‘‘Pinning’’ and Fermi level movement at GaAs surfaces and interfacesJournal of Vacuum Science & Technology A, 1990
- Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEEDJapanese Journal of Applied Physics, 1989
- The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS StructuresJapanese Journal of Applied Physics, 1988
- X-ray photoelectron spectroscopic studies of electrode surfaces using a new controlled transfer techniqueJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1979
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of GoldPhysical Review B, 1972
- The Ultraviolet Absorption Spectra of Aliphatic Sulfides and PolysulfidesJournal of the American Chemical Society, 1949