Universal Passivation Effect of (NH4)2Sx Treatment on the Surface of III-V Compound Semiconductors
- 1 March 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (3A) , L322
- https://doi.org/10.1143/jjap.30.l322
Abstract
The effectiveness of (NH4)2S x treatment on the (100) surface of GaP, (Al, Ga)As, InP and InAs was studied in comparison to that on GaAs by means of Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED). It was concluded that the existence of sulfur atoms bonded to semiconductors prevents the adsorption of oxygen. This phenomenon brings about the metal-dependent Schottky barrier fabricated on the (NH4)2S x -treated surfaces, implying the reduction in the interface state density. The structure and effect of the (NH4)2S x -treated surface of III-V compounds are qualitatively the same.Keywords
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