Optical and electrical transport mechanisms in Si-nanocrystal-based LEDs
- 27 February 2003
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 17, 604-606
- https://doi.org/10.1016/s1386-9477(02)00883-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxideJournal of Luminescence, 1998
- Initial carrier relaxation dynamics in ion-implanted Si nanocrystals: Femtosecond transient absorption studyApplied Physics Letters, 1998
- Stable and efficient electroluminescence from a porous silicon-based bipolar deviceApplied Physics Letters, 1996
- High quantum efficiency for a porous silicon light emitting diode under pulsed operationApplied Physics Letters, 1995
- Luminescence properties of nanometer-sized Si crystallites: Core and surface statesPhysical Review B, 1994
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967