Hydrogenated Amorphous Silicon Carbide Photoreceptor for Photoaddressed Spatial Light Modulator
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1S)
- https://doi.org/10.1143/jjap.32.590
Abstract
A highly photosensitive hydrogenated amorphous silicon carbide (a-Si1-x C x :H) photoreceptor with a PIN diode configuration has been prepared by means of a plasma CVD method using SiH4 and C2H2 highly diluted with He. He-diluted plasma is effective in restraining the generation of CH2, CH3 and Si-CH3 configurations in the a-Si1-x C x :H film and markedly improves photoconductivity of the film. Using this photoreceptor, a photoaddressed spatial light modulator (PASLM) which operates in a transmission mode, has been fabricated with a ferroelectric liquid crystal. The PASLM exhibits a high resolution of 180 line pairs/mm, a response time of ∼50 µs and a contrast ratio of ∼30:1 under a write light (λ=565 nm) of 1.5 mW/cm2 intensity.Keywords
This publication has 14 references indexed in Scilit:
- Noise analysis of polarization-based optoelectronic connectionist machinesApplied Optics, 1992
- A New Optical Neuron Device for All-Optical Neural NetworksJapanese Journal of Applied Physics, 1991
- All-optical bipolar neural network with polarization-modulating neuronsOptics Letters, 1991
- A highly photoconductive polyimide film.Journal of Photopolymer Science and Technology, 1990
- Photoaddressed liquid crystal spatial light modulatorsApplied Optics, 1989
- All-optical neural network with inhibitory neuronsOptics Letters, 1989
- The silicon liquid-crystal light valveJournal of Applied Physics, 1985
- Liquid crystal light valve using bulk monocrystalline Bi_12SiO_20 as the photoconductive materialApplied Optics, 1982
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982
- Chemical effects on the frequencies of Si-H vibrations in amorphous solidsSolid State Communications, 1979