Material and electrical properties of ultra-shallow p/sup +/-n junctions formed by low-energy ion implantation and rapid thermal annealing
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (3) , 476-486
- https://doi.org/10.1109/16.75156
Abstract
No abstract availableThis publication has 32 references indexed in Scilit:
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