Very shallow p+-n junction formation by low-energy BF+2 ion implantation into crystalline and germanium preamorphized silicon
- 21 March 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (12) , 963-965
- https://doi.org/10.1063/1.99242
Abstract
Very low energy (6 keV) BF+2 ion implantation has been used to form very shallow (≤1000 Å) junctions in crystalline and Ge+ preamorphized Si. Low‐temperature furnace annealing was used to regrow the crystal, and rapid thermal annealing was used for dopant activation and radiation damage removal. In preamorphized samples, Ge+ implantation parameters were found to have an influence on B diffusion. Our results show that for temperatures higher than 950 °C, B diffusion, rather than B channeling, becomes the dominant mechanism in determining the junction depth. Computer simulations of the profiles show regions of retarded and enhanced B diffusion, which depend on surface and end‐of‐range damage, respectively.Keywords
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