The black silicon method. VI. High aspect ratio trench etching for MEMS applications
- 29 January 1995
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The recently developed black silicon method (BSM) is presented as a powerful tool in finding recipes for the fabrication of MEMS building blocks such as Ay-stages. scanning probe tips, inkjet filters, multi-electrodes for neuro-electronic interfaces, and mouldings Lor direct patterning into polymers. The fabrication of these blocks in silicon with high aspect ratios and smooth surface textures will be described and discussed by using the BSM and standard reactive ion etching (ME)Keywords
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