The black silicon method II:The effect of mask material and loading on the reactive ion etching of deep silicon trenches
- 1 February 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 27 (1-4) , 475-480
- https://doi.org/10.1016/0167-9317(94)00149-o
Abstract
No abstract availableKeywords
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