Noise resistance of FET's in the hot electron regime
- 30 April 1971
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (4) , 347-350
- https://doi.org/10.1016/0038-1101(71)90080-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Voltage-current characteristics of GaAs J-FET's in the hot electron rangeSolid-State Electronics, 1970
- On the influence of hot carrier effects on the thermal noise of field-effect transistorsIEEE Transactions on Electron Devices, 1970
- Computer Aided Two-dimensional Analysis of the Junction Field-effect TransistorIBM Journal of Research and Development, 1970