Spontaneous oscillations in gallium arsenide field effect transistors
- 29 February 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (2) , 157-172
- https://doi.org/10.1016/0038-1101(80)90153-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Two-dimensional numerical analysis of stability criteria of GaAs FET'sIEEE Transactions on Electron Devices, 1976
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- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970