Infrared excitation of the subbands of A δ-layer in GaAs and Si
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 247-250
- https://doi.org/10.1016/0039-6028(90)90302-o
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Resonance spectroscopy of InGaAs/InP quantum well sub-bandsSemiconductor Science and Technology, 1988
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- Influence of charged impurities on Si inversion-layer electronsPhysical Review B, 1982
- Inter-subband optical absorption in space-charge layers on semiconductor surfacesZeitschrift für Physik B Condensed Matter, 1977
- Optical Determination of the Symmetry of the Ground States of Group-V Donors in SiliconPhysical Review B, 1965