High Performance Gate-all-around TFT(GAT) For High-density, Low-voltage-operation, And Low-power Srams
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 128-132
- https://doi.org/10.1109/vtsa.1997.614743
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A C-Switch cell for low-voltage operation and high-density SRAMsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Impact of µA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyondJapanese Journal of Applied Physics, 1996
- A 0.4 µm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density MemoriesJapanese Journal of Applied Physics, 1995