Electro-optically induced absorption in α-Si:H/α-SiCN waveguiding multistacks
- 9 May 2008
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 16 (10) , 7540-7550
- https://doi.org/10.1364/oe.16.007540
Abstract
Electro optical absorption in hydrogenated amorphous silicon (α-Si:H) �?? amorphous silicon carbonitride (α-SiCxNy) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at λ = 1.55 μm through the application of an electric field which induces free carrier accumulation across the multiple insulator/semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined twodimensional (2-D) optical and electrical simulations.Keywords
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