Flip-Chip Mounted GaAs Power Fet with Improved Performance in X to Ku Band
- 1 October 1979
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High-power GaAs f.e.t. prepared by molecular-beam epitaxyElectronics Letters, 1978
- GaAs f.e.t.s with graded channel doping profilesElectronics Letters, 1977
- Dependence of GaAs power MESFET microwave performance on device and material parametersIEEE Transactions on Electron Devices, 1977